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| SI4480EY Vishay Siliconix N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) 0.035 @ VGS = 10 V 0.040 @ VGS = 6.0 V ID (A) 6.2 5.8 D SO-8 S S S G 1 2 3 4 Top View S Ordering Information: SI4480EY SI4480EY-T1 (with Tape and Reel) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 80 "20 6.2 5.2 40 2.5 3 2.1 - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Lead Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. t v 10 sec. Document Number: 71060 S-03951--Rev. B, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJL Symbol Typical 40 85 20 Maximum 50 100 24 Unit _C/W C/W 2-1 SI4480EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currena Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 6.2 A VGS = 6.0 V, ID = 5.8 A VDS = 15 V, ID = 6.2 A IS = 2.1 A, VGS = 0 V 20 0.026 0.030 25 1.2 0.035 0.040 2 "100 1 20 V nA mA A W S V Symbol Test Condition Min Typb Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.1 A, di/dt = 100 A/ms VDD = 40 V, RL = 30 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 1.5 12.5 12.5 52 22 50 VDS = 40 V, VGS = 10 V, ID = 6.2 A 30 9 5.6 4.0 25 25 80 40 80 ns W 50 nC Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 6 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 40 Transfer Characteristics 24 5V 24 16 16 TC = 125_C 8 25_C - 55_C 0 8 4V 0 0.0 0.8 1.6 2.4 3.2 4.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71060 S-03951--Rev. B, 26-May-03 2-2 SI4480EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 2500 Capacitance r DS(on)- On-Resistance ( W ) 0.04 C - Capacitance (pF) VGS = 6 V 0.03 VGS = 10 V 0.02 2000 Ciss 1500 1000 Coss 0.01 500 Crss 0.00 0 10 20 ID - Drain Current (A) 30 40 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 40 V ID = 6.0 A 8 2.4 2.2 r DS(on) - On-Resistance (W) (Normalized) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0 6 12 18 24 30 Qg - Total Gate Charge (nC) 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 6 A 6 4 2 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.06 On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) 0.05 ID = 6.0 A 0.04 I S - Source Current (A) TJ = 175_C 10 0.03 TJ = 25_C 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71060 S-03951--Rev. B, 26-May-03 www.vishay.com 2-3 SI4480EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.5 50 Single Pulse Power 40 0.0 V GS(th) Variance (V) ID = 250 mA Power (W) 30 - 0.5 20 - 1.0 10 - 1.5 - 50 - 25 0 25 50 75 100 125 150 175 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 85_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse Normalized Effective Transient Thermal Impedance 0.001 0.0001 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 2-4 Document Number: 71060 S-03951--Rev. B, 26-May-03 |
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